The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features

• Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
• High isolation voltage between input and output (Viso=5000 V rms )
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact small outline package
• Pb free and RoHS compliant.